Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 46, Pages 51837-51845Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c15789
Keywords
2D covalent organic framework film; electric field-induced charge transfer; interfacial synthesis; nonvolatile resistive memory device; organic electronics; polyimide
Funding
- Office of Science, Office of Basic Energy Sciences of the U.S. Department of Energy [DE-AC02-05CH11231]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-05-CH11231, KC3104]
- National Natural Science Foundation of China [21802128, 21725306, 21872154]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDB12020100]
- National Key RAMP
- D Program of China [2017YFA0204702]
- China Scholarship Council (CSC)
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Two-dimensional polyimide covalent organic framework (2D PI-NT COF) films were constructed on indium tin oxide-coated glass substrates to fabricate two-terminal sandwiched resistive memory devices. The 2D PI-NT COF films condensated from the reaction between 4,4',4 ''-triaminotriphenylamine and naphthalene-1,4,5,8-tetracarboxylic dianhydride under solvothermal conditions demonstrated high crystallinity, good orientation preference, tunable thickness, and low surface roughness. The well-aligned electron-donor (triphenylamine unit) and -acceptor (naphthalene diimide unit) arrays rendered the 2D PI-NT COF films a promising candidate for electronic applications. The memory devices based on 2D PI-NT COF films exhibited a typical write-once-read-many-time resistive switching behavior under an operating voltage of +2.30 V on the positive scan and -2.64 V on the negative scan. A high ON/OFF current ratio (>10(6) for the positive scan and 10(4)-10(6) for the negative scan) and long-term retention time indicated the high fidelity, low error, and high stability of the resistive memory devices. The memory behavior was attributed to an electric field-induced intramolecular charge transfer in an ordered donor-acceptor system, which provided the effective charge-transfer channels for injected charge carriers. This work represents the first example that explores the resistive memory properties of 2D PI-COF films, shedding light on the potential application of 2D COFs as information storage media.
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