Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 5, Pages 568-571Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2685435
Keywords
Access device; selector; Ovonic threshold switching material; high-density memory array; storage class memory
Categories
Funding
- POSTECH-Samsung Electronics Research Project
Ask authors/readers for more resources
In this letter, simple binary Ovonic threshold switching (OTS) material with outstanding selector device performance has been demonstrated. Even with its simple material composition and easy fabrication process, the selector device with the binary OTS material showed excellent selector performance such as high-OFF resistance (> 1 G Omega at 0.1 V), low-ON resistance (< 1 k Omega at 2.0 V), extremely sharp switching slope (< 1 mV/dec), fast operating speed (t(transition) < 2 ns, t(delay) < 7 ns), high endurance (> 10 8 cyclesof 150 ns pulse), high electrical stability (> 1ks at 1.2 V), and high thermal stability (> 400 degrees C /30 min). Furthermore, conduction mechanism of the OTS has been explained by Poole-Frenkel-based analytical modeling.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available