Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 7, Pages 937-940Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2707529
Keywords
Charge storage; dynamic ON-resistance; electron trapping; floating Si-substrate termination; GaN-on-Si
Categories
Funding
- Hong Kong Research Grant Council [N_HKUST636/13]
- Shenzhen Science and Technology Innovation Commission [JCYJ20160229205511222]
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Dynamic ON-resistance (R-ON) of 650-V GaN-on-Si lateral power deviceswith a floating Si-substrate termination is investigated. Compared with the grounded substrate termination, the floating substrate could deliver smaller dynamic R-ON under higher drain bias (>400 V) switching operation, but leads to larger dynamic R-ON under low-drain bias (<400 V). The underlying physical mechanisms are explained by the tradeoff between charge storage in the Si substrate and electron trapping effect in the GaN buffer layer.
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