Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 3, Pages 359-362Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2653192
Keywords
GaN; high-electron-mobility-transistor (HEMT); millimeter (mm) wave; N-Polar; power amplifier; W-band
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Funding
- Office of Naval Research
- Defense Advanced Research Projects Agency
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A novel N-Polar GaN cap (MIS) high electron mobility transistor demonstrating record 6.7-W/mm power density with an associated power-added efficiency of 14.4% at 94 GHz is presented. This state-of-the-art power performance is enabled by utilizing the inherent polarization fields of N-Polar GaN in combination with a 47.5-nm in situ GaN cap layer to simultaneously mitigate dispersion and improve access region conductivity. These excellent results build upon past work through the use of optimized device dimensions and a transition from a sapphire to a SiC substrate for reduced self-heating.
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