Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 8, Pages 1019-1022Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2719161
Keywords
Analog RRAM; synapse; neuromorphic computing
Categories
Funding
- Key R&D Program of China [2016YFA0201801]
- National Hi-tech (R&D) Project of China [2014AA032901]
- NSFC [61674089, 61674087, 61076115, 61674092]
- Beijing Municipal Science and Technology Project [D161100001716002]
- Beijing Advanced Innovation Center for Future Chip
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Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. The impact of local temperature on analog switching behavior is elucidated. The transition from abrupt switching to analog switching is found at higher temperature. Based on this result, a thermal enhanced layer (TEL) is proposed to confine heat in switching layer for realizing analog RRAM. The HfOx/TEL RRAM shows analog switching characteristics with more than ten times window using 50-ns pulses. Finally, a 1-kb analog RRAM array is demonstrated with uniform analog switching, fast speed, excellent resistance window, and excellent retention properties.
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