Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 12, Pages 1724-1727Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2763597
Keywords
Charge density waves; radiation hardness; 1T-TaS2 threshold switching
Categories
Funding
- National Science Foundation through the Emerging Frontiers of Research Initiative 2-DARE project: Novel Switching Phenomena in Atomic MX2 Heterostructures for Multifunctional Applications [NSF EFRI-1433395]
- Semiconductor Research Corporation through the Center for Function Accelerated nanoMaterial Engineering
- Defense Advanced Research Project Agency through the Center for Function Accelerated nanoMaterial Engineering
- UC-National Laboratory Collaborative Research and Training Program
- Defense Threat Reduction Agency Basic Research [HDTRA1-14-1-0042]
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The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at dosesup to 1 Mrad (SiO2). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T-TaS2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T-TaS2, are promising for applications in high radiation environments.
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