Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 11, Pages 1536-1539Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2748596
Keywords
Flexible electronics; indium-gallium-zinc-oxide; carbon nanotubes; thin-film transistors; flexible thin-film circuits; complementary circuits
Categories
Ask authors/readers for more resources
In this letter, we report a flexible complementary common-source (CS) amplifier comprising one p-type spray-coated singlewalled carbon nanotube and one n-type sputtered InGaZnO4 thin-film transistor (TFT). Bottom-gate TFTs were realized on a free-standing flexible polyimide foil using amaximumprocess temperature of 150 degrees C. The resulting CS amplifier operates at 10 V supply voltage and exhibits a gain bandwidth product of 60 kHz. Thanks to the use of a p-type TFT acting as a tunable current source load, the amplifier gain can be programmed from3.5 up to 27.2V/V (28.7 dB). To the best of our knowledge, this is the highest gain ever obtained for a flexible single-stage CS amplifier.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available