Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 9, Pages 1236-1239Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2736541
Keywords
3D NAND flash memory; program inhibit string; self-boosted inhibit scheme; natural local self-booting (NLSB)
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Funding
- Basic Science Research Programs through the National Research Foundation of Korea
- Ministry of Science, ICT and Future Planning [2016R1C1B2013257, 2017M1A7A1A01016265]
- National Research Foundation of Korea [21A20130012631, 2016R1C1B2013257, 2017M1A7A1A01016265] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This letter examined the natural local self-boosting effect of an inhibited channel in three-dimensional (3D) NAND flash memory. The inhibited channel in the 3D NAND flash structure can be in the floating state easily, because its channel is not connected directly to its substrate. Despite the application of the global self-boosted program-inhibit scheme, the selected wordline cell is localized automatically during the program pulse application. This phenomenon is analyzed using a computer-aided design simulation, and an analytical model of boosted potential of an inhibited channel in 3D NAND flash memory is proposed.
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