Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 4, Pages 505-508Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2665163
Keywords
GaN HEMTs; p-GaN; short-circuit; reliability
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Funding
- Spanish MINECO [TEC2011-22607, TEC2014-51903-R, RYC-2010-07434, PCIN-2014-057]
- AGAUR Funds [2014-SGR 1596]
- BSH Fair Cooking Project
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Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under Short-Circuit (SC) by experiment and physics-based simulations (drift-diffusion and thermodynamic models). A strong drain current reduction (> 70% after saturation peak) and high gate leakage current (tens of mA) are observed. All studied devices withstand the SC test at bus voltages up to 350 V, while fail at 400 V. Furthermore, its understanding is crucial to improving SC ruggedness in p-GaN HEMTs.
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