Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 12, Pages 1696-1699Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2768099
Keywords
p-GaN/AlGaN/GaN heterostructure; C-V characteristics
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In this letter, we analyzed the gate capacitance characteristics in p-GaN gate/AlGaN/GaN heterostructures by using a two-junction capacitor model. First, we have observed that the C-V behavior depends on the different processing conditions of the p-GaN gate. Second, a two-junction capacitor model considering a series connection of the Schottky metal/p-GaN junction capacitor and the AlGaN barrier capacitor is proposed to explain this C-V behavior. Based on this model, the junction capacitance has an influence on the total capacitance value under a high gate bias due to the Schottky metal/p-GaN junction. Furthermore, the Mg-concentration and hole density can be extracted. The extracted hole density is consistent with the results obtained by Hall measurements.
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