Journal
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 9, Pages 1274-1277Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2730248
Keywords
Gallium arsenide (GaAs); photoconductive semiconductor switch (PCSS); synchronization
Categories
Funding
- National Basic Research Program of China [2014CB339802]
- National Natural Science Foundation of China [61427814, 51377133, 51477140]
- ultrafast photo-electronic technology innovation group of Shaanxi Province [2014KCT-13]
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In this letter, the synchronization of GaAs photoconductive semiconductor switches in two electrically driven configurations for laser diodes excitation is investigated. Comparisons on the synchronization are carried out by varying the bias electric field and optical excitation energy. The optimum synchronization of 296 ps is achieved at 1.2 kV with optical excitation energy of 1.9 mu J. The results demonstrate the relationship between the synchronization and transient carriers' population ratio among the intervalley.
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