4.2 Article

Interface modulation in multi-layered BaTiO3 nanofibers/PVDF using the PVP linker layer as an adhesive for high energy density capacitor applications

Journal

MATERIALS ADVANCES
Volume 1, Issue 4, Pages 680-688

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d0ma00240b

Keywords

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Funding

  1. Department of Atomic Energy (DAE), BRNS, India [34/14/14/2014-BRNS]
  2. Department of Science and Technology (DST) under Clean Energy Research Initiative [DST/TMD/CERI/C140(G)]
  3. Science and Engineering Research Board (Government of India) [IMP/2018/001703]
  4. DST, India, through the INSPIRE Faculty Award [IFA-13 ENG-57]

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In this work, we have studied the role of a linker across the interface in a multi-layered polymer nanocomposite-based capacitor using barium titanate (BT) nanofibers (NFs) as nanofillers and polyvinylidene fluoride (PVDF) as the polymer matrix. In a multi-layered device, the interface between the top and bottom layers is usually non-homogeneous and must be taken into consideration for high dielectric performance. The energy densities of single layered PVDF, single layered 1 vol% BT NFs/PVDF (1 vol% B), and bi-layered 1 vol% BT/PVDF-BT/PVDF (1 vol% BB) were 1.8, similar to 2.0, and similar to 1.7 J cm(-3), respectively, at similar to 210 MV m(-1). To clearly investigate the effect of the interface between the top and bottom layers of BT NFs/PVDF films, a polyvinyl pyrrolidone (PVP) linker layer was incorporated in the middle layer of the device (BT NFs/PVDF-PVP-BT NFs/PVDF abbreviated as BPB). The dielectric study revealed that the middle PVP adhesive layer plays a crucial role in tailoring the dielectric properties as the energy density was surprisingly enhanced to 8.7 J cm(-3) for the 1 vol% BPB device at similar to 210 MV m(-1), which is similar to 400% higher than that of the 1 vol% BB device. The present work provides an important finding that interface engineering in a multi-layered polymer nanocomposite helps in making homogeneous interfaces and hence enhancing the energy density at much lower electric fields. Furthermore, this work will provide a new path to fabricate large-scale, low-cost, and highly efficient capacitors using a simple device fabrication method.

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