Journal
MATERIALS ADVANCES
Volume 1, Issue 7, Pages 2357-2367Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0ma00451k
Keywords
-
Categories
Funding
- Italian MIUR through the PRIN Project [20179337R7]
Ask authors/readers for more resources
This study elucidates the working mechanism upon visible light exposure of the mixed C3N4-ZnO material. Structural (XRD), morphological (TEM) and optical (UV-vis spectroscopy) measurements have highlighted the intimate contact established at the interface of the biphasic solid and enhanced photoactivity arising under visible irradiation with respect to the pristine compounds. Electron paramagnetic resonance (EPR) spectroscopy analysis coupled with in situ irradiation, performed at 77 K, and supported by accurate simulations, demonstrated that the charge carrier dynamics at the C3N4-ZnO interface is governed by a direct Z-scheme heterojunction mechanism rather than that of a type-II heterojunction system. The experimental results suggest that the photoexcited electrons in the ZnO conduction band annihilate the holes in the C3N4 valence band, as in a solid direct Z-scheme system, allowing an improved charge carrier separation and stabilizing both electrons and holes at the best reductive and oxidative potentials, respectively.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available