Journal
2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020)
Volume -, Issue -, Pages 2772-2776Publisher
IEEE
DOI: 10.1109/apec39645.2020.9124425
Keywords
Gallium Nitride (GaN); power module; parasitic; double-sided cooling
Funding
- Civil Aerospace Technology Research Project in Advance [B0202]
- China Postdoctoral Science Foundation [2018M643647]
- National Postdoctoral Program for Innovative Talents [BX201800004]
- National Natural Science Foundation of China [51907155]
- Power Electronics Science and Education Development Program of Delta Group
Ask authors/readers for more resources
This paper presents a compact double-sided cooling Gallium Nitride (GaN) power module with low parasitic parameters. The GaN bare dies are sandwiched between two ceramic substrates with high thermal conductivity to achieve efficient double-sided cooling capability. Through careful design and layout optimization, the bus decoupling capacitors and core drive components are successfully integrated into the module to reduce critical parasitic parameters. The thermal and parasitic characteristics of the module are analyzed and optimized. Finally, a double-pulse-test platform is built based on the presented 650V/30A GaN power module. The results show that the power loop inductance is reduced to 0.95 nH and the gate loop inductance is reduced to about 2nH. The dv/dt of the drain-source voltage can be as high as 150V/ns, while the overshoot is only 10%.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available