Journal
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020)
Volume -, Issue -, Pages 58-61Publisher
IEEE
DOI: 10.1109/ispsd46842.2020.9170169
Keywords
IGBT; TVS diode; clamping; overvoltage protection
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Inverters based on power switches, such as IGBTs, in either resonant or hard-switching topologies can, during or after a load-fault, exhibit a transient overvoltage at the collector-emitter leads. In such an event, the maximum allowed collectoremitter voltage may be exceeded and the power switch destroyed. To avoid this, some form of active clamping may be used. In this work, we present a concept of a single possibly co-packed, high-voltage TVS-diode with typical breakdown voltages ranging from 1.2 to 1.7 kV.
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