4.6 Article

Preparation of a CuGaSe2 single crystal and its photocathodic properties

Journal

RSC ADVANCES
Volume 10, Issue 66, Pages 40310-40315

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d0ra07904a

Keywords

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Funding

  1. JSPS [19H02822, 20H05120]
  2. Grants-in-Aid for Scientific Research [19H02822, 20H05120] Funding Source: KAKEN

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Chalcopyrite CuGaSe2 single crystals were successfully synthesized by the flux method using a home-made Bridgman-type furnace. The grown crystals were nearly stoichiometric with a Se-poor composition. Although a wafer form of the thus-obtained single crystal showed poor p-type electrical properties due to such unfavorable off-stoichiometry, these properties were found to be improved by applying a post-annealing treatment under Se vapor conditions. As a result, an electrode derived from the Se-treated single crystalline wafer showed appreciable p-type photocurrents. After deposition of a CdS ultrathin layer and a nanoparticulate Pt catalyst on the surface of the electrode, appreciable photoelectrochemical H-2 evolution was observed over the modified electrode under photoirradiation by simulated sunlight with application of a bias potential of 0 V-RHE.

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