A 125.5-157 GHz 8 dB NF and 16 dB of Gain D-band Low Noise Amplifier in CMOS SOI 45 nm

In this paper, a D-band millimeter-wave low noise amplifier circuit in CMOS SOI 45 nm technology is presented. It achieves 8 dB of noise figure and 16 dB of gain with a 3-dB bandwidth of 31.5 GHz (125.5-157 GHz). It is composed of four stages of capacitively neutralized differential common-source cells cascaded using integrated mm-wave transformers to achieve high gain and large bandwidth. It consumes 75 mW from a 1-V voltage supply, and occupies a compact active area of 0.07 mm(2).