Analysis and Optimization of GaN Diode Structure for High Power and High Efficiency Rectifier

This paper analyzes and optimizes the structure of gallium nitride (GaN) planar Schottky barrier diode (SBD) to maximize the rectifier RF-DC conversion efficiency (PCE) and the operating dynamic range. The analysis indicates a small series resistance and a small zero-bias junction capacitance were needed to improve the wide dynamic range performance of the rectifier circuit. The prototype single-shunt rectifiers using the proposed GaN SBDs for evaluation achieves a conversion efficiency of more than 80% at an input power of 40dBm at 5.8GHz. The high efficiency design rectifier achieves 87% peak PCE with 23dB dynamic range. The wide dynamic range design rectifier achieves 78% peak PCE with 32dB dynamic range.