Journal
CAS 2020 PROCEEDINGS: 2020 INTERNATIONAL SEMICONDUCTOR CONFERENCE
Volume -, Issue -, Pages 195-198Publisher
IEEE
Keywords
TEOS; PECVD; MEMS devices; thin film characterization
Categories
Ask authors/readers for more resources
Deposition parameters of tetraethylorthosilicate (TEOS) layers on silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) method were investigated We design the experiment taking into consideration chamber pressure, substrate temperature, RF Power and mass flow rate (oxygen and TEOS) to asses their influence on deposition rate, film uniformity, refractive index uniformity and film stress. All the results were evaluated for applications that require low temperature processing in order to avoid damage of Microelectromechanical Systems (MEMS) devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available