Journal
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
Volume -, Issue -, Pages 2403-2405Publisher
IEEE
DOI: 10.1109/pvsc45281.2020.9300639
Keywords
space solar cells; radiation hardness; InGaAsP; GaInAsP; MOVPE; irradiation; annealing
Funding
- European Union's Horizon 2020 Research and Innovation Programme [EU/776362]
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As an answer to increased demand for more radiation tolerant solar cells for space applications, we investigate the dependence of radiation hardness of III-V compounds on composition of InGaAsP. Four solar cells with different composition were grown on InP and metamorphically on GaAs and irradiated with 1 MeV electrons. A simulation-based analysis was used to determine the material specific irradiation damage. In addition, the regeneration ability is investigated under typical operating conditions (60 degrees C and AM0 illumination) and under the ECSS standard. While a clear decrease in radiation damage compared to GaAs is observed in all samples, the effect is stronger with increasing InP-fraction. The irradiation induced defect recombination coefficient can be described with a linear function of InP-fraction.
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