Journal
2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
Volume -, Issue -, Pages 449-452Publisher
IEEE
DOI: 10.1109/pvsc45281.2020.9300834
Keywords
n-poly; p-poly; passivating contacts; co-plating; TOPCon
Funding
- Rijksdienst voor Ondernemend Nederland [TEUE118003]
Ask authors/readers for more resources
The current work is aimed at the development of the building blocks for the integration of polysilicon-based passivating contacts in co-plated n-PERT front junction solar cells. We show that both n-type poly and p-type poly layers (called n-poly and p-poly hereafter) can be obtained simultaneously by the sintering of undoped (i-poly) layers during the POCl3 diffusion that induces the auto-doping from an existing B-doped emitter. State of the art J(0) values with very high uniformity were measured for n-poly, auto doped p-poly, and boron emitter. The total area weighted J(0) of a passivated cell before metallization is calculated to be around 32 fA/cm(2). We also show the viability of a laser oxidation process to pattern the front p-poly Si layer without measurable damage. Finally, we demonstrate laser ablation and plating processes that induce only very limited damage, leading to a high iV(oc) of around 700 mV for asymmetric samples with p and n-poly passivated surfaces.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available