Dielectric and Impedance Spectroscopy studies of Ba0.90Y0.10SnO3

The Ba0.90Y0.10SnO3 has prepared by a sol-gel combustion route followed by calcination at 1000 degrees C for 8 h and sintered at 1300 degrees C for 12 h. Rietveld refinement studies of the sintered ceramic sample indicates the cubic crystal structure under space group Pm3m. Further, an increase in the dielectric constant and dissipation factor has been noted with temperature at a particular frequency while they decrease with frequency. The impedance plot of the sample has been generated at various temperatures to separate the contribution of grain, grain boundary, and electrode specimen to the bulk properties. Further, it is noticed that the resistance of grain and grain boundary nicely follows Arrhenius relation with the activation energy of (0.50 +/- 0.02) eV and (1.27 +/- 0.02) eV, respectively. Based on activation energy, we speculate that there might be either electronic or protonic conduction (OH)(center dot) within the grain and the migration of doubly ionized oxygen vacancies (V-o) through grain boundary in the available temperature range. The high value of conductivity of grain and grain boundary at 500 degrees C makes it a potential candidate for electrolyte of IT-SOFCs.