Copper oxide field-effect transistor fabricated by sol-gel method

Metal oxides are a group of materials which are in consideration for the implementation in specific electronic devices. Many elements that belong in this group of materials, show semiconductor like behaviour, and are thought to be an adequate successor for standard amorphous silicon. One group of metal oxides is partly ignored, the copper oxides. These oxides have p-type semiconductor like behaviour. It has been shown that it is possible to fabricate electric devices using these materials, but many describe the preparation of a transistor-based on cuprous oxides. Here we focus on the fabrication of cupric oxide layers using a solution-process technique known as sol-gel and subsequent preparation of field-effect transistor with gold and aluminium contacts.