Journal
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
Volume -, Issue -, Pages -Publisher
IEEE
DOI: 10.1109/IEDM13553.2020.9372031
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Funding
- Swedish Governmental Agency of Innovation System (Vinnova)
- Chalmers University of Technology
- Low Noise Factory AB
- Omnisys Instruments
- Virginia Diodes
- Wasa Millimeter Wave
- RISE Research Institutes of Sweden
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The InP HEMT is the preferred transistor technology for cryogenic low-noise amplification from 1 GHz up to 200 GHz. The InP HEMT shows its superiority at temperatures 5 to 15 K and technology development must be made with knowledge about the special circumstances occurring in III-V materials and device operating under cryogenic conditions. We report on how to electrically stabilize the cryogenic two-finger HEMT at low temperature making it possible to design low-noise amplifiers with state of the art noise performance up to mm-wave. We also demonstrate recent progress on optimizing the InP HEMT for cryogenic low-noise amplifier operation below 1 mW dc power dissipation, of interest for qubit readout electronics.
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