3.8 Proceedings Paper

III-V HEMTs for Cryogenic Low Noise Amplifiers

Publisher

IEEE
DOI: 10.1109/IEDM13553.2020.9372031

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Funding

  1. Swedish Governmental Agency of Innovation System (Vinnova)
  2. Chalmers University of Technology
  3. Low Noise Factory AB
  4. Omnisys Instruments
  5. Virginia Diodes
  6. Wasa Millimeter Wave
  7. RISE Research Institutes of Sweden

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The InP HEMT is the preferred transistor technology for cryogenic low-noise amplification from 1 GHz up to 200 GHz. The InP HEMT shows its superiority at temperatures 5 to 15 K and technology development must be made with knowledge about the special circumstances occurring in III-V materials and device operating under cryogenic conditions. We report on how to electrically stabilize the cryogenic two-finger HEMT at low temperature making it possible to design low-noise amplifiers with state of the art noise performance up to mm-wave. We also demonstrate recent progress on optimizing the InP HEMT for cryogenic low-noise amplifier operation below 1 mW dc power dissipation, of interest for qubit readout electronics.

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