Journal
IEEE SOLID-STATE CIRCUITS LETTERS
Volume 3, Issue -, Pages 74-77Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LSSC.2020.3005758
Keywords
Bandgap reference; floating proportional-to-absolute-temperature (PTAT) voltage; low-power; nano-watt; resistor-less
Funding
- Research Grant Council of Hong Kong SAR Government, China [16210517]
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This letter presents an ultra low-power resistor-less bandgap reference circuit, which is based on the topology of a single-branch floating proportional-to-absolute-temperature (PTAT) voltage. By using a cascode high impedance current bias technique, the single-branch PTAT voltage can be directly floating on the complementary-to-absolute-temperature (CTAT) voltage generated by the V-EB of the bipolar transistor. Ultra low power consumption is realized by the simple topology in the proposed method, which only needs a few current branches. Fabricated in 0.13-mu m CMOS process, this letter generates a 1.252-V bandgap reference voltage. The total power consumption is 8.26 nW with a 1.4-V supply voltage. Without a resistor, this letter can achieve a small active area of 0.017 mm(2). The average value of the temperature coefficient is 68 ppm/degrees C from -20 degrees C to 110 degrees C, and the line regulation is 0.019 %/V.
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