Scalable manufacture of verticalp-GaN/n-SnO2heterostructure for self-powered ultraviolet photodetector, solar cell and dual-color light emitting diode

Vertical SnO(2)basedp-njunctions are pivotal since they built the core components in photoelectronic systems. Nevertheless, preparation of high-qualityp-SnO(2)with controllable hole mobility and concentration is still a great challenge owing to the self-compensating effect and lattice distortion caused by the radius discrepancy between host and doped atoms. Herein,ptype GaN:Mg grown by metal organic chemical vapor deposition is employed as hole transportation layer to constructp-nheterojunction with intrinsicn-SnO(2)prepared by atomic layer deposition. Both material preparation techniques are compatible with current industrial mass production processes. Thep-GaN/n-SnO(2)heterojunction can be developed as solar cell, dual-color light emitting diode and self-powered, high speed ultraviolet (UV) photodetector with external quantum efficiency of 74% at 0 V bias voltage. In addition, direct recombination of donor bound excitons ((DX)-X-0) and UV emission red shifts caused by quantum confinement Stack effect are observed in SnO2. Since our device fabrication technique is a standard craft in photoelectronics, the study ofp-GaN/n-SnO(2)heterojunction suggests a simple and effective strategy for large scale device integration in next generation high performance photoelectronic devices.

Automated summary

This study utilized p-type GaN:Mg and n-type SnO(2) to fabricate a p-n heterojunction for applications in solar cells, dual-color light emitting diodes, and high-speed ultraviolet photodetectors, achieving an external quantum efficiency of up to 74%.