Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 50, Issue 1, Pages 59-64Publisher
SPRINGER
DOI: 10.1007/s11664-020-08548-2
Keywords
In2O3 nanowire; VLS method; InP; Au catalyst; field-effect transistor
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2020R1I1A3A04037241]
- Graduate University of Science and Technology, Vietnam Academy of Science and Technology [GUST.STS.DT2020-HH10]
- National Research Foundation of Korea [2020R1I1A3A04037241] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The study demonstrated the feasibility of synthesizing In2O3 nanowires using different In sources through the VLS method, with the nanowires exhibiting good crystallinity and various morphologies suitable for electronic devices.
We demonstrated the feasibility of using InP (100) substrates, a different indium source, for the synthesis of In2O3 nanowires by the vapor-liquid-solid (VLS) method using a 20-nm-thick Au layer as a catalyst. By varying the thickness of the Au layer and the growth temperature (T), the nanowires showed different morphologies. The nanowires grew along the (100) direction and had perfect crystallinity and lengths up to several hundreds of micrometers. The configured field-effect transistor revealed an n-type behavior with 115 mu A of the drain-source current, I-DS, under 1.0 V of gate voltage, V-DS, at 1.33 x 10(-4) kPa of pressure and temperature of 20 degrees C. This result indicates that it is feasible to use different In sources to synthesize In2O3 nanowires by the VLS method for electronic devices.
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