Material gain of InGaAs/GaAs quantum well-dots

We study material gain of a novel type of quantum heterostructures of mixed (0D/2D) dimensionality referred to as quantum well-dots (QWDs). To evaluate the material gain in a broad range of injection currents (30-1200 A cm(-2) per-layer) we studied edge-emitting lasers with various numbers of InGaAs/GaAs QWD layers in the active region and different waveguide designs. The dependence of the material gain on the current is well fitted by an empirical exponential equation similar to the one used for quantum dots (QDs) in the whole range of injection current densities. The estimated QWD transparency current-density-per-layer of 31 A cm(-2) ranks between the values reported for quantum wells and QDs. The maximal QWD material gain as high as 1.1.10(4) cm(-1) has been measured. The results obtained confirm specific gain properties of InGaAs QWDs making them promising active media for lasers, superluminescence diodes and optical amplifiers.

Automated summary

The study investigates the material gain properties of mixed-dimensional quantum heterostructures known as quantum well-dots (QWDs), with InGaAs QWDs showing promising potential for applications in lasers and optical devices. The results demonstrate specific gain characteristics of InGaAs QWDs, making them suitable for use in lasers, superluminescence diodes, and optical amplifiers.