Journal
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
Volume 64, Issue 3, Pages -Publisher
SCIENCE PRESS
DOI: 10.1007/s11433-020-1625-9
Keywords
erbium-doped lithium niobate on insulator; on-chip laser; microdisk
Categories
Funding
- National Key R&D Program of China [2019YFB2203500, 2017YFA0303700]
- National Natural Science Foundation of China [91950107]
- Foundation for Development of Science and Technology of Shanghai [17JC1400400]
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The commercialization of lithium niobate on insulator (LNOI) wafers has led to significant on-chip photonic integration applications due to its exceptional photonic, acousto-optic, electro-optic, and piezoelectric properties. High-Q erbium-doped LNOI microdisk was fabricated on a silicon substrate, demonstrating C-band laser emission with impressive thermal stability. This microlaser is expected to play a crucial role in the photonic integrated circuits of the lithium niobate platform.
The commercialization of lithium niobate on insulator (LNOI) wafer has resulted in significant on-chip photonic integration application owing to its remarkable photonic, acousto-optic, electro-optic, and piezoelectric nature. In recent years, a variety of high-performance on-chip LNOI-based photonic devices have been realized. In this study, we developed a 1-mol% erbium-doped lithium niobate crystal and its LNOI on a silicon substrate and fabricated an erbium-doped LNOI microdisk with high quality factor (similar to 1.05x10(5)). C-band laser emission at similar to 1530 and similar to 1560 nm (linewidth 0.12 nm) from the high-Q erbium-doped LNOI microdisk was demonstrated with 974- and 1460-nm pumping, with the latter having better thermal stability. This microlaser would play an important role in the photonic integrated circuits of the lithium niobate platform.
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