On-chip erbium-doped lithium niobate microcavity laser

The commercialization of lithium niobate on insulator (LNOI) wafer has resulted in significant on-chip photonic integration application owing to its remarkable photonic, acousto-optic, electro-optic, and piezoelectric nature. In recent years, a variety of high-performance on-chip LNOI-based photonic devices have been realized. In this study, we developed a 1-mol% erbium-doped lithium niobate crystal and its LNOI on a silicon substrate and fabricated an erbium-doped LNOI microdisk with high quality factor (similar to 1.05x10(5)). C-band laser emission at similar to 1530 and similar to 1560 nm (linewidth 0.12 nm) from the high-Q erbium-doped LNOI microdisk was demonstrated with 974- and 1460-nm pumping, with the latter having better thermal stability. This microlaser would play an important role in the photonic integrated circuits of the lithium niobate platform.

Automated summary

The commercialization of lithium niobate on insulator (LNOI) wafers has led to significant on-chip photonic integration applications due to its exceptional photonic, acousto-optic, electro-optic, and piezoelectric properties. High-Q erbium-doped LNOI microdisk was fabricated on a silicon substrate, demonstrating C-band laser emission with impressive thermal stability. This microlaser is expected to play a crucial role in the photonic integrated circuits of the lithium niobate platform.