4.6 Article

Isomerization change and charge trap double mechanisms induced ternary data storage performance

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 9, Issue 2, Pages 569-574

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d0tc04710d

Keywords

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Funding

  1. NSF of China [21878199, 21938006, 21808149]
  2. NSF of the Jiangsu Higher Education Institutions of China [17KJA430015]

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A butyl chain-substituted molecule NACB was designed and fabricated as a ternary memory device with well-defined crystalline characteristics and tri-current states. The switching mechanism of the device originated from isomerization change and charge trap double mechanisms. The low write and read voltage, along with ternary data storage abilities, suggest potential for portable, low-power consumption and super-high density memory storage.
Compared to 0 and 1 based binary systems, organic ternary data-storage systems that record data as 0, 1 and 2 can hold much more data in a given amount of cells within a storage device. Thus, how to design a functional molecule with desired film crystallinity and definite switching mechanism is the key issue for achieving excellent ternary memory devices. However, such ternary system remained less-explored due to the lack of appropriate materials. Herein, a butyl chain-substituted molecule, namely nitrobenzene-azo-carbazole (NACB), was designed and fabricated as an ITO/NACB/Al sandwich-structured device. The vacuum-deposited NACB film shows well-defined crystalline characteristics. The following electric measurement exhibited OFF to ON1 and then to ON2 tri-current states under continuous electric field, and the switching mechanism originated from the cooperated isomerization change and charge trap double mechanisms. We hope the verified mechanism can act as a model for future ternary molecular designs. The low write and read voltage (all lower than -3 V), ternary data storage abilities indicate that the device may be used for portable, low-power consumption and super-high density memory storage.

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