Journal
ACS APPLIED NANO MATERIALS
Volume 4, Issue 1, Pages 820-825Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.0c03144
Keywords
fullerene nanowire; resistance switch; electric device; polymerization and depolymerization; electron-beam irradiation
Funding
- JSPS KAKENHI, Japan [20K05291]
- Grants-in-Aid for Scientific Research [20K05291] Funding Source: KAKEN
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The study presents the principle experiment for driving a single-fullerene switch using a self-assembling fullerene nanowire. The C60 nanowire exhibited negative differential resistance (NDR) and two-state resistance switching, which was generated by local polymerization and depolymerization among the C60 molecules.
Fullerene has been expected to realize next generation nanoelectronics as a key element. However, although single-fullerene switch operation using scanning tunneling microscope (STM) has been developed, the structural architecture with electrodes is still needed to make progress as devices. Because the fullerenes are smaller than 1.0 nm, which is suitable for the STM approach, the subnanometer size is still too small, even with the latest device electrode fabrication techniques. Here we present the principle experiment on a self-assembling fullerene nanowire to drive single-fullerene switch. A fullerene C-60-nanowire (C60NW), which was synthesized at a liquid-liquid interface, exhibited negative differential resistance (NDR) and two-state resistance switching generated by local polymerization and depolymerization among the C-60 molecules. A C60NW was electrically characterized after a preset treatment to induce C60NW conductivity by electron-beam (EB) irradiation to form an initial conduction path. A current though the C60NW increased more than 100-fold after the preset treatment, whereas an as-grown C60NW exhibited a nanoampere-level current under a 20 V bias voltage. The current-voltage characteristics showed a nonlinear current increase and NDR, leading to reproducible two-state resistance switching under bias-voltage modulation. The nonlinear current increase, the NDR, and the resistance switching are explained by local energy control of the current-induced connection and disconnection of C-60 molecules, leading to tunneling current modulation toward a single element of C-60 in a nanomaterial switching function.
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