SrSnO3 Metal-Semiconductor Field-Effect Transistor With GHz Operation

A SrSnO3 high-frequency field-effect transistor (FET) is demonstrated. The device structure consists of a recessed Schottky-gate FET with a heavily doped cap layer. DC measurements on devices with 0.5-mu m gate length and 4-mu m source/drain spacing show a maximum drain current of 53 mA/mm and a maximum transconductance of 43.2mS/mm. Radio frequency (RF) characterization reveals a cut-off frequency, f(T), of 1.31 GHz (0.97 GHz) and a maximum oscillation frequency, f(max), of 3.25 (3.25) GHz, after (before) de-embedding. These results represent an important advancement in developing perovskite materials for RF applications.

Automated summary

The study presents a SrSnO3 high-frequency field-effect transistor (FET) with performance parameters such as maximum drain current and transconductance, and provides relevant data in radio frequency (RF) characterization. This represents a significant advancement in the development of perovskite materials for RF applications.