4.6 Review

Advanced technologies for the fabrication of MOF thin films

Journal

MATERIALS HORIZONS
Volume 8, Issue 1, Pages 168-178

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d0mh00898b

Keywords

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Funding

  1. European Union [801464]
  2. European Research Council [677020]
  3. Swiss National Science Foundation [200021_181988, 191394]
  4. Fondation Nanosciences (Universite Grenoble Alpes, France)
  5. European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme [771565]
  6. Swiss National Science Foundation (SNF) [200021_181988] Funding Source: Swiss National Science Foundation (SNF)
  7. European Research Council (ERC) [677020] Funding Source: European Research Council (ERC)

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Metal-organic framework (MOF) thin films, with tunable porosity, large internal surface area, and high crystallinity, have shown potential applications in gas sensing, microelectronics, photovoltaics, and membrane-based separation technologies. Despite recent attention, challenges remain in manufacturing and integration, requiring the development of more effective methods.
Metal-organic framework (MOF) thin films represent a milestone in the development of future technological breakthroughs. The processability of MOFs as films on surfaces together with their major features (i.e. tunable porosity, large internal surface area, and high crystallinity) is broadening their range of applications to areas such as gas sensing, microelectronics, photovoltaics, and membrane-based separation technologies. Despite the recent attention that MOF thin films have received, many challenges still need to be addressed for their manufacturing and integrability, especially when an industrial scale-up perspective is envisioned. In this brief review, we introduce several appealing approaches that have been developed in the last few years. First, a summary of liquid phase strategies that comprise microfluidic methods and supersaturation-driven crystallization processes is described. Then, gas phase approaches based on atomic layer deposition (ALD) are also presented.

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