Journal
CHINESE OPTICS LETTERS
Volume 19, Issue 1, Pages -Publisher
OSA-OPTICAL SOC
DOI: 10.3788/COL202119.011401
Keywords
Ti:sapphire crystal; tiled Ti:sapphire amplifier; chirped pulse
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Funding
- National Key R&D Program of China [2017YFE0123700]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDB1603]
- National Natural Science Foundation of China [61925507]
- Program of Shanghai Academic/Technology Research Leader [18XD1404200]
- Shanghai Municipal Science and Technology Major Project [2017SHZDZX02]
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A novel tiled Ti:sapphire amplifier was demonstrated with >1 J amplified chirped pulse output, achieving a maximum peak power of 28 TW and energy conversion efficiency comparable to that of a single Ti:S amplifier. This technique may provide a potential pathway for 100 PW or EW lasers in the future.
A novel tiled Ti:sapphire (Ti:S) amplifier was experimentally demonstrated with >1 J amplified chirped pulse output. Two Ti:S crystals having dimensions of 14 mm x 14 mm x 25 mm were tiled as the gain medium in a four-pass amplifier. Maximum output energy of 1.18 J was obtained with 2.75 J pump energy. The energy conversion efficiency of the tiled Ti:S amplifier was comparable with a single Ti:S amplifier. The laser pulse having the maximum peak power of 28 TW was obtained after the compressor. Moreover, the influence of the beam gap on the far field was discussed. This novel tiled Ti:S amplifier technique can provide a potential way for 100 PW or EW lasers in the future.
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