4.6 Article

Reduced energy loss enabled by thiophene-based interlayers for high performance and stable perovskite solar cells

Journal

JOURNAL OF MATERIALS CHEMISTRY A
Volume 9, Issue 7, Pages 4138-4149

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d0ta10270a

Keywords

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Funding

  1. National Natural Science Foundation of China [61974045]
  2. Natural Science Foundation of Guangdong Province [2019A1515012092]
  3. Key Laboratory of Functional Molecular Solids, Ministry of Education [FMS201905]
  4. Guangdong Provincial Key Laboratory of New and Renewable Energy Research and Development [Y909kp1001]
  5. Science and Technology Bureau of the Dongguan Government [2019622163008]

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This study introduced three thiophene-based interlayers for perovskite solar cells (PVSCs) to reduce energy loss and improve performance. The interlayers optimized the electronic states of the SnO2 electron transport layer and MAPbI(3) film quality, enhancing conductivity and electron transportation efficiency. The interlayers also passivated defect states, promoted high quality film formation, and resulted in PVSCs with higher power conversion efficiency and stability.
The excessive energy loss (E-loss) mainly resulting from the energetic offsets between different layers and defect state-induced charge trapping and recombination limits the further development of perovskite solar cells (PVSCs). In this work, three solution-processed thiophene-based interlayers were firstly introduced to reduce the E-loss in PVSCs by optimizing the surface electronic states of the SnO2 electron transport layer (ETL) and improving the MAPbI(3) film quality. The thiophene-based interlayers improve the conductivity and reduce the work function of SnO2 ETLs, resulting in more efficient electron transportation. Downward band-bending occurs at the SnO2/MAPbI(3) interface owing to the permanent dipole moment of these interlayers, which enables more efficient charge carrier extraction and lower E-loss for PVSCs. In addition, the sulfur atoms of the thiophene rings with a lone pair of electrons can bond with the under-coordinated Pb2+ of MAPbI(3), thus passivating the ion defect states and reducing the defect state-induced charge carrier trapping and recombination at the SnO2/MAPbI(3) interface. These interlayers change the hydrophilicity of the SnO2 surface and promote the formation of high quality MAPbI(3) films with larger grain size and fewer grain boundaries, improving the stability of PVSCs. Combining these desirable advantages, the optimized MAPbI(3)-based PVSCs achieve a highest power conversion efficiency (PCE) of 20.61% with a high open-circuit voltage (V-OC) of 1.117 V and fill factor (FF) over 80%, which is higher than that of the pristine PVSCs with a highest PCE of 17.54%. The optimized PVSCs without any encapsulation show higher thermal and humidity stability compared with the pristine PVSCs. Therefore, this work demonstrates an effective way to reduce E-loss, as well as improving both the performance and stability of PVSCs by utilizing thiophene-based interlayers to modify the interface of SnO2/MAPbI(3).

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