Manipulation of electronic property of epitaxial graphene on SiC substrate by Pb intercalation

Manipulating the electronic properties of graphene has been a subject of great interest since it can aid material design to extend the applications of graphene to many different areas. In this paper, we systematically investigate the effect of lead (Pb) intercalation on the structural and electronic properties of epitaxial graphene on the SiC(0001) substrate. We show that the band structure of Pb-intercalated few-layer graphene can be effectively tuned through changing intercalation conditions, such as coverage, location of Pb, and the initial number of graphene layers. Lead intercalation at the interface between the buffer layer (BL) and the SiC substrate decouples the BL from the substrate and transforms the BL into a p-doped graphene layer. We also show that Pb atoms tend to donate electrons to neighboring layers, leading to an n-doping graphene layer and a small gap in the Dirac cone under a sufficiently high Pb coverage. This paper provides useful guidance for manipulating the electronic properties of graphene layers on the SiC substrate.

Automated summary

This paper systematically investigates the effect of lead intercalation on the structural and electronic properties of epitaxial graphene on the SiC substrate. The band structure of Pb-intercalated few-layer graphene can be effectively tuned through intercalation conditions, showing potential for manipulating the electronic properties of graphene layers. Lead intercalation at the interface between the buffer layer and the substrate decouples the layers and can transform the BL into a p-doped graphene layer.