4.6 Article

Higher-order topological Anderson insulators

Journal

PHYSICAL REVIEW B
Volume 103, Issue 8, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.103.085408

Keywords

-

Funding

  1. National Natural Science Foundation of China [11974201]
  2. Tsinghua University
  3. National Thousand-Young-Talents Program
  4. Frontier Science Center for Quantum Information of the Ministry of Education of China
  5. Tsinghua University Initiative Scientific Research Program
  6. National Key Research and Development Program of China [2016YFA0301902]

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Disorder effects in a two-dimensional system with chiral symmetry can induce a quadrupole topological insulating phase, with topological properties defined by effective boundary Hamiltonians, the quadrupole moment, and zero-energy corner modes. The study also reveals gapped and gapless topological phases, as well as a Griffiths regime, where states at zero energy become multifractal. The self-consistent Born approximation is applied to show that the induced topological phase arises from disorder-renormalized masses.
We study disorder effects in a two-dimensional system with chiral symmetry and find that disorder can induce a quadrupole topological insulating phase (a higher-order topological phase with quadrupole moments) from a topologically trivial phase. Their topological properties manifest in a topological invariant defined based on effective boundary Hamiltonians, the quadrupole moment, and zero-energy corner modes. We find gapped and gapless topological phases and a Griffiths regime. In the gapless topological phase, all the states are localized, while in the Griffiths regime, the states at zero energy become multifractal. We further apply the self-consistent Born approximation to show that the induced topological phase arises from disorder renormalized masses. We finally introduce a practical experimental scheme with topoelectrical circuits where the predicted topological phenomena can be observed by impedance measurements. Our work opens the door to studying higher-order topological Anderson insulators and their localization properties.

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