4.8 Article

Custom plating of nanoscale semiconductor/catalyst junctions for photoelectrochemical water splitting

Journal

NANOSCALE
Volume 13, Issue 3, Pages 1997-2004

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d0nr08414j

Keywords

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Funding

  1. ANR (project EASi-NANO) [ANR-16-CE09-0001-01]
  2. Agence Nationale de la Recherche (ANR) [ANR-16-CE09-0001] Funding Source: Agence Nationale de la Recherche (ANR)

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Dispersed transition metal nanoparticles electrodeposited on n-Si surfaces can enhance photoelectrochemical water splitting without classical protection layers. However, this method lacks control over metal morphology and geometry on the photoanode surface. Templated nanoscale electrodeposition on photoactive n-Si allows for customization of nanoscale inhomogeneous Schottky junctions, serving as stable photoanodes with photoelectrochemical properties dependent on geometrical features. The experimental trends are rationalized using simulation.
Photoelectrochemical water splitting under harsh chemical conditions can be promoted by dispersed transition metal nanoparticles electrodeposited on n-Si surfaces, without the need for classical protection layers. Although this method is simple, it only allows for poor control of metal morphology and geometry on the photoanode surface. Herein, we introduce templated nanoscale electrodeposition on photoactive n-Si for the customization of nanoscale inhomogeneous Schottky junctions and demonstrate their use as stable photoanodes. The photoelectrochemical properties of the so-manufactured photoanodes exhibit a strong dependence on the photoanodes' geometrical features, and the obtained experimental trends are rationalized using simulation.

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