Journal
PHYSICAL REVIEW RESEARCH
Volume 3, Issue 1, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevResearch.3.013105
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Funding
- JSPS KAKENHI [19H01853, 17H02924, 16H06345, 19H00864, 19K21858, 20H00337, 19H01837, 19H05824, 18H01168, 18H05225]
- Waseda University [2018B-184, 2019C-253, 2020C-269]
- Grants-in-Aid for Scientific Research [19H01837, 19K21858, 18H01168, 20H00337] Funding Source: KAKEN
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The ferrimagnetic La5Mo4O16 undergoes a phase transition at 60 K due to orbital ordering of Mo 4d states, leading to formation of small ferrimagnetic domains responsible for relaxation behavior and memory effect in magnetization. The nonvolatile positive magnetoresistance observed below 60 K is attributed to disappearance of magnetic domains and electrical conduction along domain walls with applied magnetic field.
We studied the ferrimagnet La5Mo4O16 with Mo ions on quasisquare lattices both experimentally and theoretically. We found that in addition to the antiferromagnetic ordering at T-N = 200 K, a magnetic phase transition into a ferrimagnetic phase occurs at T-s1 = 60 K, which is caused by the orbital ordering of the Mo 4d states. We also found that the relatively small size of ferrimagnetic domains despite the large Ising anisotropy of the Mo spins are formed below T-s1, which are responsible for the relaxation behavior and the memory effect in the magnetization. Nonvolatile positive magnetoresistance observed in this compound below T-s1 can be attributed to the fact that such magnetic domains and the electrical conduction along the domain walls disappear with the applied magnetic field.
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