Journal
SCIENCE ADVANCES
Volume 7, Issue 5, Pages -Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.abe2892
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Funding
- NSF-DMR [1807969, 1807928]
- DOE BES [DE-SC0020187]
- AFOSR [FA9550-18-1-0335]
- Ohio Supercomputer Center [PAS0072]
- Elemental Strategy Initiative by the MEXT, Japan [JPMXP0112101001]
- JSPS KAKENHI [JP20H00354]
- CREST JST [JPMJCR15F3]
- National Science Foundation [DMR-1644779]
- State of Florida
- U.S. Department of Energy (DOE) [DE-SC0020187] Funding Source: U.S. Department of Energy (DOE)
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1807928] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1807969] Funding Source: National Science Foundation
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Spin-orbit coupling (SOC) is a relativistic effect that can eliminate spin degeneracy and lead to various magnetic, spintronic, and topological phenomena. In atomically thin InSe, SOC and intrinsic spin splitting can be widely adjusted and even enhanced in some devices.
Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic, and topological phenomena and applications. In bulk materials, SOC strength is a constant. Here, we demonstrate SOC and intrinsic spin splitting in atomically thin InSe, which can be modified over a broad range. From quantum oscillations, we establish that the SOC parameter a is thickness dependent; it can be continuously modulated by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Unexpectedly, alpha could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.
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