Post-synthesis control of Berry phase driven magnetotransport in SrRuO3 films

Controlling electronic band structure is an important step toward harnessing quantum materials for practical uses. This is exemplified in the spin-polarized bands near the Fermi level of a ferromagnet where small variation to the Berry curvature can be used to control the intrinsic anomalous Hall effect (AHE). Since these pathways are highly sensitive to crystal structure, iterative post-synthesis manipulation of the underlying lattice can act as a fundamental probe and provide new opportunities for functionalization. In this work, depth-dependent magnetic inhomogeneity in a 4d itinerant ferromagnet SrRuO3 film is controlled by applying low energy He ion irradiation. Combined magnetometry, polarized neutron reflectometry, and magnetotransport experiments demonstrate that the Berry phase and associated AHE can be continuously and iteratively modified post-synthesis. The findings of this work should be widely applicable to other quantum materials where crystal distortions and symmetry are tightly bound to band structure and resulting Berry phase effects.

Automated summary

Controlling electronic band structure allows for manipulation of spin-polarized bands in ferromagnetic materials, providing the ability to control the intrinsic anomalous Hall effect. In this study, depth-dependent magnetic inhomogeneity in a 4d itinerant ferromagnet film was controlled through low energy He ion irradiation, demonstrating the continuous and iterative modification of Berry phase and associated AHE post-synthesis.