Pulsed laser deposition of SiC thin films and influence of laser-assisted annealing

Silicon carbide (SiC) thin films were grown by pulsed laser deposition (PLD) on Si (1 0 0) substrates at a substrate temperature of 800 degrees C. Besides, laser annealing was performed on the post deposited intrinsic amorphous SiC films using Nd3+:YAG 355 nm laser in the Ar environment. The laser-annealed samples showed the crystalline characteristics. Crystalline characteristics of PLD grown, laser annealed samples were identified by X-ray diffraction (XRD), Raman analysis. Numerical analysis performed on SiC/Si interface to investigate the temperature distribution, to understand the mechanism of laser assisted annealing. (C) 2019 Elsevier Ltd. All rights reserved.

Automated summary

The study demonstrated that silicon carbide (SiC) thin films can be grown on Si substrates at a high temperature using pulsed laser deposition (PLD), and laser annealing can induce crystalline characteristics in the deposited amorphous SiC films. X-ray diffraction and Raman analysis were utilized to identify the crystalline characteristics of the samples, while numerical analysis was conducted to investigate temperature distribution and the mechanism of laser-assisted annealing.