Enhanced performance of ZnO nanorod array/CuSCN ultraviolet photodetectors with functionalized graphene layers

Facile, convenient and low-cost processes, including a chemical hydrothermal method and impregnation technique, were demonstrated to fabricate a self-powered ZnO nanorod array/CuSCN/reduced graphene oxide (rGO) ultraviolet photodetector. ZnO nanorods (NRs) were fully filled and encased by the CuSCN layer, in which CuSCN acts as the primary hole-transport layer and an electron reflection layer, blocking the electron transfer towards the Au electrode and reducing the electron-hole pair recombination. After annealing, this encapsulated structure further reduces the surface state defects of ZnO NRs, which can isolate the electron exchange with oxygen in the air, dramatically reducing the rise and fall time; it also forms a p-n junction, providing a built-in electric field to improve the photoresponse without applying external power. The rGO layer was coated on the surface of CuSCN as the secondary hole-transport layer and then annealed, which could effectively block Au from entering CuSCN and contacting ZnO along cracks and holes during vapor deposition, avoiding the formation of leakage channels. Furthermore, due to the ultra-high carrier mobility and the increase in work function after Au doping, the functionalized graphene could reduce the valence band shift, which is beneficial to enhance hole transport. Meanwhile, rGO obstructs the undesired barrier formed by electrical potential-induced reaction of Au with thiocyanate anions. Finally, the ZnO NR/CuSCN/rGO ultraviolet photodetector exhibits a significant enhancement in device performance (responsivity: 18.65 mA W-1 at 375 nm under 65 mW cm(-2) illumination, rectification ratio: 5690 at +/- 1 V), which is better that of than ZnO NR/CuSCN structure (10.88 mA W-1, 10.22 at +/- 1 V) and maintains the 100 ms response time.

Automated summary

A self-powered ZnO nanorod array/CuSCN/rGO ultraviolet photodetector was fabricated using facile, convenient, and low-cost processes, demonstrating enhanced device performance through encapsulation and treatment, including improved responsivity and rectification ratio.