Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 3, Issue 2, Pages 611-618Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.0c01059
Keywords
spin Hall effect; interlayer exchange coupling; magnetization switching; spin-orbit torque; micromagnetic simulation
Funding
- State Key Project of Research and Development of China [2017YFA0206302]
- National Nature Science Foundation of China [51590883, 52031014, 51771198, 51801212]
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The study investigates controllable spin-orbit torques realized by interlayer exchange coupling in Pt/Co/Ru/Co/Pt stacks, revealing the existence of long-ranged interlayer antiparallel orders. By using the current-induced hysteresis-loop-shift method, the differences in loop shift distributions depending on spacer thickness are characterized to show a possible transition mechanism of H-z(eff)/J in IEC systems.
The magnetization manipulation by the current-induced spin-orbit torque opens a prospect for energy-efficient spintronic applications. Here, we investigate controllable spin-orbit torques (SOTs) realized by interlayer exchange coupling (IEC) in Pt/Co/Ru/Co/Pt stacks. The interlayer magnetization realignments originate from the competition between itinerant electron diffusion and current-induced spin current relaxation, and it is revealed that the long-ranged interlayer antiparallel orders exist with a Ru spacer thickness of 2.3 nm. The current-induced hysteresis-loop-shift method is used to assess the H-z(eff)/J depending on the different spacer thicknesses. The loop shift distributions are revealed with the H-z(eff) phase diagrams to characterize the difference between FM-IEC and AFM-IEC. Combining with micromagnetic simulations, a possible transition mechanism of H-z(eff)/J is discussed by combining magnetization switching with the in-plane bias field in IEC systems. This work demonstrates that the spin current realigned IEC mechanism can efficiently control the SOTs in both ferromagnetic and antiferromagnetic multilayers.
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