Related references
Note: Only part of the references are listed.Fabrication of a Nb-Doped β-Ga2O3 Nanobelt Field-Effect Transistor and Its Low-Temperature Behavior
Jin-Xin Chen et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy
Akhil Mauze et al.
APL MATERIALS (2020)
High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure
Subaru Yusa et al.
CRYSTENGCOMM (2020)
Evaluation of Low-Temperature Saturation Velocity in β-(AlXGa1-X)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
Yuewei Zhang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality
M. Kneiss et al.
APL MATERIALS (2019)
Structural, optical, and electrical properties of orthorhombic κ-(InxGa1-x)2O3 thin films
A. Hassa et al.
APL MATERIALS (2019)
Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire
A. Y. Polyakov et al.
APL MATERIALS (2019)
Analysis on the electronic trap of β-Ga2O3 single crystal
Huiyuan Cui et al.
JOURNAL OF MATERIALS SCIENCE (2019)
Epitaxial stabilization of single phase κ-(InxGa1-x)2O3 thin films up to x=0.28 on c-sapphire and κ-Ga2O3(001) templates by tin-assisted VCCS-PLD
M. Kneiss et al.
APL MATERIALS (2019)
Epitaxial κ-(AlxGa1-x)2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD
P. Storm et al.
APL MATERIALS (2019)
Epitaxial engineering of polar ε-Ga2O3 for tunable two-dimensional electron gas at the heterointerface
Sung Beom Cho et al.
APPLIED PHYSICS LETTERS (2018)
Band alignment of AlN/β-Ga2O3 heterojunction interface measured by x-ray photoelectron spectroscopy
Jin-Xin Chen et al.
APPLIED PHYSICS LETTERS (2018)
Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy
Shun-Ming Sun et al.
APPLIED PHYSICS LETTERS (2018)
Heteroepitaxial growth of ε-(Al&ITx&ITGa1-&ITx&IT)2O3 alloy films on &ITc&IT-plane AlN templates by mist chemical vapor deposition
Daisuke Tahara et al.
APPLIED PHYSICS LETTERS (2018)
Low Pressure Chemical Vapor Deposition Growth of Wide Bandgap Semiconductor In2O3 Films
Md Rezaul Karim et al.
CRYSTAL GROWTH & DESIGN (2018)
Compensation and persistent photocapacitance in homoepitaxial Sn-doped beta-Ga2O3
A. Y. Polyakov et al.
JOURNAL OF APPLIED PHYSICS (2018)
A review of the quantum Hall effects in MgZnO/ZnO heterostructures
Joseph Falson et al.
REPORTS ON PROGRESS IN PHYSICS (2018)
Heteroepitaxial growth of single-phase epsilon-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer
Y. Arata et al.
CRYSTENGCOMM (2018)
Tin-assisted growth of ε-Ga2O3 film and the fabrication of photodetectors on sapphire substrate by PLD
Yuncong Cai et al.
OPTICAL MATERIALS EXPRESS (2018)
Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3 Thin Films
Xiaolong Zhao et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Group-III Sesquioxides: Growth, Physical Properties and Devices
Holger von Wenckstern
ADVANCED ELECTRONIC MATERIALS (2017)
Efficient pure green emission from Er-doped Ga2O3 films
Zhengwei Chen et al.
CRYSTENGCOMM (2017)
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
Sriram Krishnamoorthy et al.
APPLIED PHYSICS LETTERS (2017)
Mobility of indium on the ZnO(0001) surface
R. Heinhold et al.
APPLIED PHYSICS LETTERS (2015)
Effect of indium as a surfactant in (Ga1-xInx)2O3 epitaxial growth on β-Ga2O3 by metal organic vapour phase epitaxy
M. Baldini et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2015)
A route to low temperature growth of single crystal GaN on sapphire
Pouyan Motamedi et al.
JOURNAL OF MATERIALS CHEMISTRY C (2015)
Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy
Yuichi Oshima et al.
JOURNAL OF APPLIED PHYSICS (2015)
Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In2O3 films
Natalie Preissler et al.
PHYSICAL REVIEW B (2013)
Transport and angular resolved photoemission measurements of the electronic properties of In2O3 bulk single crystals
V. Scherer et al.
APPLIED PHYSICS LETTERS (2012)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants
Dongjin Won et al.
APPLIED PHYSICS LETTERS (2012)
Orientation dependent ionization potential of In2O3: a natural source for inhomogeneous barrier formation at electrode interfaces in organic electronics
Mareike V. Hohmann et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2011)
Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN
Oliver Bierwagen et al.
PHYSICAL REVIEW B (2011)
Structure, stability and work functions of the low index surfaces of pure indium oxide and Sn-doped indium oxide (ITO) from density functional theory
Aron Walsh et al.
JOURNAL OF MATERIALS CHEMISTRY (2010)
Surfactant effect of arsenic doping on modification of ZnO (0001) growth kinetics
J. D. Ye et al.
APPLIED PHYSICS LETTERS (2009)
Origin of the Two-Dimensional Electron Gas Carrier Density at the LaAlO3 on SrTiO3 Interface
Zoran S. Popovic et al.
PHYSICAL REVIEW LETTERS (2008)
Quantum Hall effect in polar oxide heterostructures
A. Tsukazaki et al.
SCIENCE (2007)
Electron mobility in an AlGaN/GaN two-dimensional electron gas I - Carrier concentration dependent mobility
O Katz et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
Morphology evolution of ZnO(000 (1)over-bar) surface during plasma-assisted molecular-beam epitaxy
YF Chen et al.
APPLIED PHYSICS LETTERS (2002)
Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy
L Zhang et al.
APPLIED PHYSICS LETTERS (2001)
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
JP Ibbetson et al.
APPLIED PHYSICS LETTERS (2000)