4.6 Article

N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR†

Journal

JOURNAL OF MATERIALS CHEMISTRY C
Volume 9, Issue 13, Pages 4486-4495

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d0tc05861k

Keywords

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Funding

  1. King Abdullah University of Science and Technology (KAUST)
  2. DOE Office of Science [DE-SC0012704]
  3. BMBF grant InterPhase [FKZ 13N13661, FKZ 13N13656]
  4. BMBF grant MESOMERIE [FKZ 13N13661, FKZ 13N13656]
  5. European Union Horizon 2020 research and innovation program ''Widening materials models'' [646259]
  6. Alexander von Humboldt Foundation

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This study demonstrates that different molecular n-type dopants can enhance charge transport in molecular semiconductors, particularly making significant progress in the field of non-fullerene acceptors. Experimental and computational results show that the improved charge transport is due to the synergistic effects of n-doping and morphological changes. The findings highlight the importance of dopant-semiconductor interactions and their impact on morphology in enhancing charge transport in doped organic materials.
Molecular doping has been shown to improve the performance of various organic (opto)electronic devices. When compared to p-doped systems, research into n-doped organic small-molecules is relatively limited, primarily due to the lack of suitable dopants and the often encountered unfavourable microstructural effects. These factors have prevented the use of n-doping in a wider range of existing materials, such as non-fullerene acceptors (NFAs), that have already shown great promise for a range of (opto)electronic applications. Here, we show that several different molecular n-dopants, namely [1,2-b:2 ',1 '-d]benzo[i][2.5]benzodiazocine potassium triflate adduct (DMBI-BDZC), tetra-n-butylammonium fluoride (TBAF) and 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), can be used to n-dope the molecular semiconductor O-IDTBR, a promising NFA, and increase the electron field-effect mobility to >1 cm(2) V-1 s(-1). By combining complementary experimental techniques with computer simulations of doping and charge carrier dynamics, we show that improved charge transport arises from synergistic effects of n-type doping and morphological changes. Specifically, a new, previously unreported dopant-induced packing orientation results in one of the highest electron mobility values reported to-date for an NFA molecule. Overall, this work highlights the importance of dopant-semiconductor interactions and their impact on morphology, showing that dopant-induced molecular packing motifs may be generic and a key element of the charge transport enhancement observed in doped organics.

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