Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 9, Issue 14, Pages 4799-4807Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1tc00137j
Keywords
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Funding
- Key-Area Research and Development Program of Guangdong Province [2020B010174004]
- Guangdong Basic and Applied Basic Research Foundation [2020A1515110185]
- Featured Innovation Projects of Colleges and Universities in Guangdong Province (Natural Science) [2018KTSCX232]
- Key Laboratory of Optoelectronic materials and Applications in Guangdong Higher Education [2017KSYS011]
- Fudan University
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The CuZnS/GaN photodetector shows excellent performance under 350 nm light illumination, including high photocurrent, fast response speed, and ultra-high on/off ratio. At zero bias, the photodetector also exhibits a large detectivity and an ultrahigh linear dynamic range.
The heterojunction UV photodetector based on p-CuZnS and n-GaN is prepared by a simple chemical bath deposition. The CuZnS/GaN film device shows a significantly enhanced photocurrent at 3 V and 350 nm, a good rectifying behavior (ratio of 19 000 at +/- 3 V) and a large open circuit voltage (0.55 V). Furthermore, the CuZnS/GaN photodetector exhibits excellent self-powered characteristics under 350 nm light illumination, including a high photocurrent (19 mu A), a fast response speed (0.14/40 ms) and an ultrahigh on/off ratio (3 x 10(8)). More importantly, the CuZnS/GaN photodetector presents a large detectivity of 8 x 10(13) Jones and an ultrahigh linear dynamic range of 137 dB at 320 nm light illumination at zero bias. These results suggest that the CuZnS/GaN film devices have great potential as high-performance self-powered UV photodetectors for practical applications.
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