Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 57, Issue 1, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2020.3041943
Keywords
Optical device fabrication; Optical waveguides; Modulation; Electrooptic modulators; Optical variables control; Optical refraction; Electrooptical waveguides; Optical device fabrication; optical polymers; optical modulation; optical communication; integrated optics; electrooptic modulators
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For the first time, an electro-optic slot waveguide phase modulator on the InP membrane on Silicon (IMOS) platform is presented, with low-frequency characterization showing a V pi L pi product as low as 4.5 V.mm and an extinction ratio of 10.6 dB. The 3-dB optical bandwidth of this modulator is measured to be 10.5 GHz, making it suitable for broadband communication applications.
For the first time, we present an electro-optic slot waveguide phase modulator on the InP membrane on Silicon (IMOS) platform. Low-frequency characterization of this modulator shows that it can achieve a V pi L pi product as low as 4.5 V.mm and an extinction ratio equal to 10.6 dB. The 3-dB optical bandwidth of this modulator is measured to be 10.5 GHz. Here, working principles, design, fabrication, measurements, analysis of the electrical and electro-optic performance and prospects of this modulator are presented.
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