Lasing in the space charge limited current regime

We introduce an analytical model for ideal organic laser diodes based on the argument that their intrinsic active layers necessitate operation in the bipolar space charge-limited current regime. Expressions for the threshold current and voltage agree well with drift-diffusion modeling of complete p-i-n devices and an analytical bound is established for laser operation in the presence of annihilation and excited-state absorption losses. These results establish a foundation for the development of organic laser diode technology.

Automated summary

An analytical model for ideal organic laser diodes is introduced, based on the argument that their intrinsic active layers necessitate operation in the bipolar space charge-limited current regime. This study establishes a foundation for the development of organic laser diode technology by providing expressions for threshold current and voltage, and an analytical bound for laser operation in the presence of annihilation and excited-state absorption losses.