Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 9, Issue 4, Pages 1228-1234Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0tc05039c
Keywords
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Funding
- National Key Research and Development Program of China [2016YFB0701003]
- K. C. Wong Education Foundation [GJTD-2018-09]
- National Natural Science Foundation of China [21590794]
- Key Research Program of Frontier Sciences, CAS [YZDY-SSW-JSC018]
- International Partnership Program of Chinese Academy of Sciences [121522KYSB20190022]
- Youth Innovation Promotion Association of Chinese Academy of Sciences [Y201947]
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This study successfully converted CsPbBr3 into monodisperse Cs4PbBr6/CsPbBr3@Ta2O5 core-shell microcrystals with better light and thermal stability, resulting in significant improvements in photoluminescence quantum yield and photoluminescence lifetime. Moreover, the luminous efficiency of the WLED device based on Cs4PbBr6/CsPbBr3@Ta2O5 was found to be twice that of the device fabricated using Cs4PbBr6/CsPbBr3.
It is well known that surface passivation and modification are efficient approaches to improve the photoluminescence and stability of perovskites. Although CsPbBr3 nanocrystals (NCs) could be embedded into a Cs4PbBr6 matrix to enhance the photoluminescence property, the limited stability will hinder their applications. It still remains a challenge to convert CsPbBr3 to Cs4PbBr6 in one step with surface modification by using oxide on a single-particle level. Herein, the process of conversion from CsPbBr3 to Cs4PbBr6/CsPbBr3 microcrystals (MCs) by a ligand-assisted supersaturated recrystallization (LASR) method has been studied. To improve its stability, CsPbBr3 has been successfully converted into monodisperse Cs4PbBr6/CsPbBr3@Ta2O5 core-shell MCs through a facile one-step sol-gel method at room temperature. Compared with Cs4PbBr6/CsPbBr3, Cs4PbBr6/CsPbBr3@Ta2O5 has better light stability and thermal stability. Cs4PbBr6/CsPbBr3@Ta2O5 MCs display great enhancement in photoluminescence quantum yield (PLQY) (up to 94.7%) and photoluminescence lifetime (up to 67.8 ns). Furthermore, the luminous efficiency of the WLED device based on Cs4PbBr6/CsPbBr3@Ta2O5 (31.9 lm W-1) is twice that of the WLED device fabricated by Cs4PbBr6/CsPbBr3 (15.2 lm W-1).
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